| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CED3055L5 | Dual N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 508 K |
| CJD3055 | NPN Complementary silicon power transistor | distributor | DPAK | 4 | -65°C | 150°C | 542 K |
| DD305 | 500V, 30A 8.4mm / 9.5mm dish diode | distributor | Press Fit | 1 | -65°C | 175°C | 23 K |
| DD305S | 500V, 30A 8.4mm / 9.5mm dish diode | distributor | Press Fit | 1 | -65°C | 175°C | 23 K |
| DD305S | 500V, 30A 8.4mm / 9.5mm dish diode | distributor | Press Fit | 1 | -65°C | 175°C | 23 K |
| MTD3055V1 | Power MOSFET 12 Amps, 60 volts N–channel | ON-Semiconductor | - | 3 | -55°C | 175°C | 81 K |
| PHD3055E | 55 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 103 K |
| PHD3055L | 60 V, power MOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
| RFD3055LE | 11A, 60V, 0.107 Ohm, logic level, N-channel power MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 175°C | 416 K |
| RFD3055LESM | 11A, 60V, 0.107 Ohm, logic level, N-channel power MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 175°C | 416 K |
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