| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MJD3055 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 44 K |
| MTD3055EL | N-channel enhancement-mode silicon gate, 10A, 80V | Motorola | - | 3 | -65°C | 150°C | 380 K |
| MTD3055EL1 | N-channel enhancement-mode silicon gate, 10A, 80V | Motorola | - | 3 | -65°C | 150°C | 380 K |
| MTD3055V | N-channel MOSFET, 12A, 60V | Fairchild-Semiconductor | - | 3 | -55°C | 175°C | 238 K |
| MTD3055VL | N–channel power MOSFET 12 Amps, 60 Volts | ON-Semiconductor | - | 3 | -55°C | 175°C | 86 K |
| MTD3055VL | N–channel power MOSFET 12 Amps, 60 Volts | ON-Semiconductor | - | 3 | -55°C | 175°C | 86 K |
| MTD3055VL1 | N–channel power MOSFET 12 Amps, 60 Volts | ON-Semiconductor | - | 3 | -55°C | 175°C | 86 K |
| MTD3055VLT4 | N–channel power MOSFET 12 Amps, 60 Volts | ON-Semiconductor | - | 3 | -55°C | 175°C | 86 K |
| MTD3055VT4 | Power MOSFET 12 Amps, 60 volts N–channel | ON-Semiconductor | - | 3 | -55°C | 175°C | 81 K |
| PHD3055E | PowerMOS transistor. | Philips-Semiconductors | SOT428 | 3 | -55°C | 175°C | 72 K |
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