| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KTD3055 | NPN transistor for high power amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 261 K |
| MJD3055 | Complementary power transistor | Motorola | - | 4 | -65°C | 150°C | 202 K |
| MJD3055 | Complementary Power Transistors | ON-Semiconductor | DPAK | 3 | - | - | 147 K |
| MJD3055 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 91 K |
| MJD3055T4 | Complementary Power Transistors | ON-Semiconductor | DPAK | 3 | - | - | 147 K |
| MTD3055V | N-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 380 K |
| RFD3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 82 K |
| RFD3055LE | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 86 K |
| RFD3055LESM | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 86 K |
| RFD3055SM | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 82 K |
| 1 [2] [3] [4] |
|---|
