| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD570 | 8-bit successive approximation ADC. | Analog-Devices | - | - | - | - | 312 K |
| D570/32 | Rectifier diode. Vrrm = 3200V, Vrsm = 3300V. All purpose high power rectifier diodes. Non-controllable rectifiers. Free-wheeling diodes. | distributor | - | 2 | 0°C | 150°C | 302 K |
| PD57018 | RF POWER TRANSISTORS THE LDOMST PLASTIC FAMILY | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
| PD57030S | RF POWER TRANSISTORS THE LDOMST PLASTIC FAMILY | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
| PD57045S | RF POWER TRANSISTORS THE LDOMST PLASTIC FAMILY | SGS-Thomson-Microelectronics | - | - | - | - | 91 K |
| SD57030-01 | RF POWER TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
| SD57045 | RF POWER TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS | SGS-Thomson-Microelectronics | - | - | - | - | 234 K |
| SD57045-01 | RF POWER TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS | SGS-Thomson-Microelectronics | - | - | - | - | 233 K |
| SD57060 | RF POWER TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
| SD57060-01 | RF POWER TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS | SGS-Thomson-Microelectronics | - | - | - | - | 71 K |
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