Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
BYD72A | Ultra fast low-loss controlled avalanche rectifiers | Philips-Semiconductors | SOD120 | - | - | - | 55 K |
BYD72A | Ultra fast low-loss controlled avalanche rectifier. | Philips-Semiconductors | SOD120 | 2 | -65°C | 175°C | 81 K |
MH16D72AKLA-10 | 2415919104-bit (33554432-word by 72-bit) double date rate synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 327 K |
MH16D72AKLA-75 | 2415919104-bit (33554432-word by 72-bit) double date rate synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 327 K |
MH16D72AKLB-10 | 1207959552-bit (16777216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 354 K |
MH16D72AKLB-75 | 1207959552-bit (16777216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 354 K |
MH32D72AKLA-10 | 2,415,919,104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 331 K |
MH32D72AKLA-75 | 2,415,919,104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 331 K |
MH32D72AKLB-10 | 2415919104-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 358 K |
1 |
---|