| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FDC6506P | Dual P-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 204 K |
| FDC653N | N-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 70 K |
| FDC654P | P-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 74 K |
| FDC655AN | Single N-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 198 K |
| FDC6561AN | Dual N-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 256 K |
| FDC658P | Single P-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 249 K |
| LDC650 | POWR-PRO class L fuse. 650 amperes. Voltage rating: 600 Volts AC 600 Volts DC. Interrupting rating: AC: 200,000 amperes rms symmetrical, DC: 50,000 ampetres(16 millisecond time constant). | distributor | - | 2 | - | - | 85 K |
| NDC651N | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 245 K |
| NDC652P | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 247 K |
| 1 |
|---|
