Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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NTE129 | Silicon complemenary PNP transistor. Audio output, video, driver. | distributor | TO39 | 3 | -65°C | 200°C | 27 K |
NTE1290 | Integrated circuit. AM tuner for radio. | distributor | - | 16 | -30°C | 70°C | 21 K |
NTE1292 | Integrated circuit. IF amplifier and detector. | distributor | DIP | 14 | -15°C | 70°C | 25 K |
NTE1293 | Integrated circuit. Dual, audio power amplifier, 5.8W/Ch. | distributor | SIP | 12 | -30°C | 75°C | 22 K |
NTE129P | Silicon complementary PNP transistor. General purpose amp. | distributor | - | 3 | -55°C | 150°C | 20 K |
VTE1291-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
VTE1291-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
VTE1291W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 33 K |
VTE1291W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 33 K |
VTE1295 | GaAlAs infrared emitting diode. Irradiance(typ) 5.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 27 K |
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