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e3322

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
NTE3322Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.distributor-30°C150°C20 K
VTE3322LAGaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).distributor-2-40°C100°C22 K
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