| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NE5514D | Quad high-performance operational amplifier | Philips-Semiconductors | SOT162 | - | - | - | 54 K |
| NE5514N | Quad high-performance operational amplifier | Philips-Semiconductors | SOT27 | - | - | - | 54 K |
| NE5514NB | Quad high-performance operational amplifier | Philips-Semiconductors | SOT27 | - | - | - | 54 K |
| NE5514NB | Quad high-performance operational amplifier | Philips-Semiconductors | SOT27 | - | - | - | 54 K |
| NE5517AN | Dual operational transconductance amplifier | Philips-Semiconductors | SOT38 | - | - | - | 298 K |
| NE5517N | Dual operational transconductance amplifier | Philips-Semiconductors | SOT38 | - | - | - | 298 K |
| NTE5511 | Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 200V. Forward current RMS Ifrms = 5A. | distributor | TO66 | 2 | -40°C | 100°C | 22 K |
| R3111E551A-TZ | Low voltage detector. Detector threshold (-Vdet) 5.5V. Output type: Nch open drain. | distributor | - | 3 | -40°C | 85°C | 205 K |
| R3111E551C-TZ | Low voltage detector. Detector threshold (-Vdet) 5.5V. Output type: CMOS | distributor | - | 3 | -40°C | 85°C | 205 K |
| XNE5514CU | Quad high-performance operational amplifier | Philips-Semiconductors | - | - | - | - | 54 K |
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