Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MJE5730 | High-voltage PNP silicon power transistor | Motorola | - | 4 | -65°C | 150°C | 190 K |
MJE5730 | High Voltage PNP Silicon Power Transistors | ON-Semiconductor | - | 3 | - | - | 139 K |
MJE5731 | High-voltage PNP silicon power transistor | Motorola | - | 4 | -65°C | 150°C | 190 K |
MJE5731 | High Voltage PNP Silicon Power Transistors | ON-Semiconductor | - | 3 | - | - | 139 K |
MJE5731A | High-voltage PNP silicon power transistor | Motorola | - | 4 | -65°C | 150°C | 190 K |
MJE5731A | High Voltage PNP Silicon Power Transistors | ON-Semiconductor | - | 3 | - | - | 139 K |
NTE573 | Schottky barrier rectifier. Peak repetitive reverse voltage Vrrm = 60V. Average forward rectified current Io = 5A. | distributor | - | 2 | -65°C | 125°C | 18 K |
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