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f1000

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MRF100055 W, microwave power transistor NPN siliconM-A-COM---manufacturer-of-RF-3--160 K
MRF10005Microwave power transistorMotorola-3--100 K
MRF1000MB0.7 W, microwave power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--104 K
PTF1000735 watts, 1.0 GHz GOLDMOS field effect transistorEricsson-Microelectronics202224--235 K
PTF1000985 watts, 1.0 GHz GOLDMOS field effect transistorEricsson-Microelectronics202306--228 K
TSMF1000High speed IR emitter diodeVishay-Telefunken----38 K
UF1000FReverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1000FReverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1000FCTReverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifierdistributor-3-65°C150°C46 K
UF1000FCTReverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifierdistributor-3-65°C150°C46 K
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