| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1001 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F1001C | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 33 K |
| HAF1001 | Power termal MOSFET | distributor | - | - | - | - | 53 K |
| MGF1001BT | Tape carrier microwave power GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 153 K |
| MRF1001A | RF NPN Transistor | Microsemi-Corporation | - | - | - | - | 200 K |
| PTF10015 | 50 watts, 300-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20235 | 2 | - | - | 221 K |
| PTF10019 | 70 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20237 | 4 | - | - | 322 K |
| UF1001 | 1AMP ultra fast switching rectifier | distributor | - | 2 | -65°C | 150°C | 759 K |
| UF1001FCT | Reverse voltage: 100.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
| UF1001FCT | Reverse voltage: 100.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
| 1 [2] [3] |
|---|
