| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1004 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 37 K |
| MRF1004MB | 4 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 101 K |
| PTF10045 | 30 watts, 1.60-1.65 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20222 | 4 | - | - | 207 K |
| PTF10048 | 30 watts, 2.1-2.2 GHz,W-CDMA GOLDMOS field effect transistor | Ericsson-Microelectronics | 20237 | 3 | - | - | 233 K |
| UF1004CT | Reverse voltage: 400.00V; 10A ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 48 K |
| UF1004CT | Reverse voltage: 400.00V; 10A ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 48 K |
| UF1004F | Reverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
| UF1004F | Reverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
| UF1004FCT | Reverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
| UF1004FCT | Reverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
| UF1004FCT | Reverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
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