| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1019 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 195 K |
| IRF1010EL | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 123 K |
| IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 211 K |
| IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 146 K |
| IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 146 K |
| MRF10120 | 120 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 128 K |
| MRF10150 | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 139 K |
| SF101 | 50 V, 1 A, Super fast recovery rectifier | distributor | DO | 2 | -55°C | 150°C | 174 K |
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