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f1016

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F1016Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C41 K
PTF1016085 watts, 860-960 MHz GOLDMOS field effect transistorEricsson-Microelectronics202483--253 K
PTF10161165 watts, 869-894 MHz GOLDMOS field effect transistorEricsson-Microelectronics202503--288 K
PTF1016218 watts, 860-960 MHz GOLDMOS field effect transistorEricsson-Microelectronics202223--341 K
SN74F1016DW 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAYTexas-InstrumentsDW200°C70°C84 K
SN74F1016DW 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAYTexas-InstrumentsDW200°C70°C84 K
SN74F1016DWR 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAYTexas-InstrumentsDW200°C70°C84 K
SN74F1016DWR 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAYTexas-InstrumentsDW200°C70°C84 K
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