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f1018

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F1018Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-8-65°C150°C38 K
IRF1018EPBF60V Single N-Channel HEXFET Power MOSFETInternational-Rectifier---430 K
IRF1018ESLPBF 60V Single N-Channel HEXFET Power MOSFETInternational-Rectifier---430 K
IRF1018ESPBF60V Single N-Channel HEXFET Power MOSFETInternational-Rectifier---430 K
IRF1018ESTRLPBF 60V Single N-Channel HEXFET Power MOSFETInternational-Rectifier---430 K
MF1018S-1SAW filter for digital mobile telephoneMitsubishi-Electric-Corporation-Semiconductor-GroupSMD6-20°C75°C146 K
MF1018S-2SAW filter for digital mobile telephoneMitsubishi-Electric-Corporation-Semiconductor-GroupSMD6-20°C75°C144 K
MF1018S-3SAW filter for digital mobile telephoneMitsubishi-Electric-Corporation-Semiconductor-GroupSMD6-20°C75°C161 K
MF1018S-4SAW filter for digital mobile telephoneMitsubishi-Electric-Corporation-Semiconductor-GroupSMD6-20°C75°C137 K
MF1018V-4Filter for the transmitting RF circuitMitsubishi-Electric-Corporation-Semiconductor-GroupSMD--20°C70°C74 K
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