Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CAT28F102NA-45T | 45ns 1M-bit CMOS flash memory | distributor | PLCC | 44 | -40°C | 105°C | 159 K |
CAT28F102NA-55T | 55ns 1M-bit CMOS flash memory | distributor | PLCC | 44 | -40°C | 105°C | 159 K |
CAT28F102NA-70T | 70ns 1M-bit CMOS flash memory | distributor | PLCC | 44 | -40°C | 105°C | 159 K |
F1020 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 40 K |
F1021 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
F1022 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
F1027 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 40 K |
SF102 | 100 V, 1 A, Super fast recovery rectifier | distributor | DO | 2 | -55°C | 150°C | 174 K |
UF102 | Ultrafast switching rectifier. Peak reverse voltage 200 V. Average forward current 1.0 A. | distributor | - | 2 | -55°C | 150°C | 54 K |
UF102G | Ultrafast switching rectifier. Peak reverse voltage 200 V. Average forward current 1.0 A. | distributor | - | 2 | -55°C | 150°C | 56 K |
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