| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1034 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 31 K |
| MBRF1035 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 105 K |
| MF1037S-1 | Filter for the RF circuit | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 170 K |
| MF1037S-2 | Filter for the RF circuit | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 170 K |
| MRF1031 | VHF power transistor | Motorola | - | 4 | - | - | 54 K |
| MRF10350 | Microwave pulse power transistor | Motorola | - | 3 | - | - | 101 K |
| MRF1035MB | Microwave pulse power transistor | Motorola | - | 4 | - | - | 100 K |
| SBLF1030 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 110 K |
| SBLF1030CT | Schottky Rectifier | General-Semiconductor | - | - | - | - | 113 K |
| TEF1033 | DUAL BIPOLAR OP-AMPS | SGS-Thomson-Microelectronics | - | - | - | - | 68 K |
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