| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DF107 | 1000 V, 1 A, bridge rectifier | distributor | DIP | 4 | - | - | 57 K |
| DF107-S | 1000 V, 1 A, bridge rectifier | distributor | SMD | 4 | - | - | 57 K |
| F1072 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| F1074 | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 40 K |
| F1076 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| F1077 | 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| PMBF107 | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 60 K |
| SF107 | 600 V, 1 A, Super fast recovery rectifier | distributor | DO | 2 | -55°C | 150°C | 174 K |
| SMF107 | Surface mount fast recovery rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 1.0 A. | distributor | - | - | -65°C | 175°C | 151 K |
| SMF107A | Surface mount fast recovery rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 1.0 A. | distributor | - | - | -65°C | 175°C | 156 K |
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