| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1401 | 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 42 K |
| IF140 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 92 K |
| IF140A | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 92 K |
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF140SMD | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| MGF1403B | Low noise GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 166 K |
| MRF140 | 150 W, N-channel MOS linear RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 204 K |
| OPF1402 | High speed fiber optic transmitter | distributor | - | 8 | -40°C | 85°C | 482 K |
| OPF1404 | High speed fiber optic transmitter | distributor | - | 8 | -40°C | 85°C | 482 K |
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