| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1427 | 250 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 41 K |
| IF142 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 63 K |
| IRF142 | 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 55 K |
| MGF1423B | Small signal GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 261 K |
| QRF1420T30 | 1400V, 200A fast recovery common anode diode | distributor | - | - | - | - | 116 K |
| RF142 | Transistor power amplifier duai-band controller for GSM and PCS application | distributor | TSSOP | 20 | -30°C | 85°C | 456 K |
| RF142 | Heterojunction bipolar transistor power amplifier dual-band controller | distributor | PQFP | - | -30°C | 85°C | 70 K |
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