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f143

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F1430300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C38 K
IRF14328A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETsIntersil-Corporation----55 K
QRF1430T301400V, 300A fast recovery common anode diodedistributor----106 K
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