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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F201210 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-2-65°C150°C37 K
F201320 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C38 K
M28F201-120K1Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 120ns Access (PLCC)SGS-Thomson-MicroelectronicsPLCC32--179 K
M28F201-70K1Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 70ns Access (PLCC)SGS-Thomson-MicroelectronicsPLCC32--179 K
M28F201-90K1Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 90ns Access (PLCC)SGS-Thomson-MicroelectronicsPLCC32--179 K
SF20150 V, 2 A, Super fast recovery rectifierdistributorDO2-55°C150°C177 K
SST32HF201-70-4C-L3KMilti-purpose flash (MPF) + SRAM combomemorySilicon-Storage-Technology-Inc-LFBGA480°C70°C325 K
SST32HF201-70-4E-L3KMilti-purpose flash (MPF) + SRAM combomemorySilicon-Storage-Technology-Inc-LFBGA48-20°C85°C325 K
SST32HF201-90-4E-L3KMilti-purpose flash (MPF) + SRAM combomemorySilicon-Storage-Technology-Inc-LFBGA48-20°C85°C325 K
SST32HF201-90-4E-L3KMilti-purpose flash (MPF) + SRAM combomemorySilicon-Storage-Technology-Inc-LFBGA48-20°C85°C325 K
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