Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F2012 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
F2013 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
M28F201-120K1 | Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 120ns Access (PLCC) | SGS-Thomson-Microelectronics | PLCC | 32 | - | - | 179 K |
M28F201-70K1 | Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 70ns Access (PLCC) | SGS-Thomson-Microelectronics | PLCC | 32 | - | - | 179 K |
M28F201-90K1 | Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 90ns Access (PLCC) | SGS-Thomson-Microelectronics | PLCC | 32 | - | - | 179 K |
SF201 | 50 V, 2 A, Super fast recovery rectifier | distributor | DO | 2 | -55°C | 150°C | 177 K |
SST32HF201-70-4C-L3K | Milti-purpose flash (MPF) + SRAM combomemory | Silicon-Storage-Technology-Inc- | LFBGA | 48 | 0°C | 70°C | 325 K |
SST32HF201-70-4E-L3K | Milti-purpose flash (MPF) + SRAM combomemory | Silicon-Storage-Technology-Inc- | LFBGA | 48 | -20°C | 85°C | 325 K |
SST32HF201-90-4E-L3K | Milti-purpose flash (MPF) + SRAM combomemory | Silicon-Storage-Technology-Inc- | LFBGA | 48 | -20°C | 85°C | 325 K |
SST32HF201-90-4E-L3K | Milti-purpose flash (MPF) + SRAM combomemory | Silicon-Storage-Technology-Inc- | LFBGA | 48 | -20°C | 85°C | 325 K |
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