Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HF220-28 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 24 K |
HF220-50 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
HF220-50F | NPN RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -55°C | 200°C | 20 K |
IRF220 | 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 68 K |
IRFF220 | 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 325 K |
MMBF2201NT1 | Small-signal MOSFET TMOS single N-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 106 K |
MMBF2201NT3 | Small-signal MOSFET TMOS single N-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 106 K |
MMBF2201PT1 | Small-signal MOSFET TMOS single P-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 132 K |
MMBF2201PT3 | Small-signal MOSFET TMOS single P-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 132 K |
MMBF2202PT1 | Small-signal MOSFETs TMOS single P-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 179 K |
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