| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF230 | 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 69 K |
| IRF230 | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| IRFF230 | 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 327 K |
| RF2301 | High isolation buffer amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 198 K |
| RF2301PCBA | High isolation buffer amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 198 K |
| RF2304 | General purpose low-noise amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 197 K |
| RF2304PCBA | General purpose low-noise amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 197 K |
| RF2306 | General purpose amplifier | RF-Micro-Devices-RFMD | SOP | 8 | -40°C | 85°C | 59 K |
| RF2306PCBA | General purpose amplifier | RF-Micro-Devices-RFMD | SOP | 8 | -40°C | 85°C | 59 K |
| RF2307PCBA | General purpose amplifier | RF-Micro-Devices-RFMD | SOP | 8 | -40°C | 85°C | 59 K |
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