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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AVF250NPN silicon RF power transistorAdvanced-Semiconductor-Inc--3-65°C250°C17 K
FSF250R24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETsIntersil-Corporation----45 K
FSF250R24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETsIntersil-Corporation----45 K
HF250-50NPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C18 K
IRF250200V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO3---22 K
IRF250SMD200V Vdss N-Channel FET (field effect transistor)Semelab-Plc-SMD1---23 K
MDF250A30300V diode (non-isolated type)SanRex-Sansha-Electric-Mfg--Co--Ltd--2-30°C150°C267 K
MDF250A40400V diode (non-isolated type)SanRex-Sansha-Electric-Mfg--Co--Ltd--2-30°C150°C267 K
MDF250A40-L/M400V diode moduleSanRex-Sansha-Electric-Mfg--Co--Ltd--2-30°C150°C376 K
MDF250A50500V diode (non-isolated type)SanRex-Sansha-Electric-Mfg--Co--Ltd--2-30°C150°C267 K
RF250Rx ASIC for CDMA, AMPS and PCS applicationdistributorTQFP48-30°C80°C427 K
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