Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AVF450 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 3 | -65°C | 250°C | 17 K |
FRF450H | 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 48 K |
FSF450D | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
FSF450R | 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
IF4500 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 62 K |
IF4501 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 91 K |
IRF450 | Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 R | Fairchild-Semiconductor | - | - | - | - | 56 K |
IRF450 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 144 K |
IRF450 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 19 K |
TSSF4500 | High speed IR emitter diode | Vishay-Telefunken | - | - | - | - | 50 K |
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