Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
IRF5305 | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 175°C | 124 K |
IRF530FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
IRF530FP | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
IRF530N | 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 125 K |
IRF530N | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 97 K |
N74F5300D | Fiber optic LED driver | Philips-Semiconductors | SOT96 | - | - | - | 81 K |
N74F5300N | Fiber optic LED driver | Philips-Semiconductors | SOT97 | - | - | - | 81 K |
TSDF53030 | N-Channel depletion mode RF Dual-MOSMIC (MOS Monolithic Integrated Circuit) transistor | Vishay-Telefunken | SOT363 | - | - | - | 62 K |
UF530 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 93 K |
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