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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF5805HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5VInternational-RectifierTSOP6-55°C150°C126 K
IRF5806HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5VInternational-RectifierMicro66-55°C150°C218 K
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