| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF660 | PNP silicon RF transistor | Infineon-formely-Siemens | - | 3 | - | - | 39 K |
| BF660W | PNP silicon RF transistor | Infineon-formely-Siemens | - | 3 | - | - | 59 K |
| IRF6601 | Power MOSFET, 20V, 26A | International-Rectifier | ISOMETRIC | 5 | -55°C | 150°C | 130 K |
| IRF6602 | Power MOSFET for Ideal for CPU core DC-DC converters, 20V, 11A | International-Rectifier | DirectFET | 5 | -55°C | 150°C | 131 K |
| K4F660412D-JC/L | 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
| K4F660412D-TC/L | 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 367 K |
| K4F660811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F660811B-TC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F660812D-JC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 368 K |
| K4F660812D-TC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 368 K |
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