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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF820HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C169 K
IRF820AHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C100 K
IRF820ALHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C133 K
IRF820ASHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-RectifierDDPak3-55°C150°C133 K
IRF820SHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C172 K
MF820M-GMCAV20Mb, 8/16-bit data bus compact flash cardMitsubishi-Electric-Corporation-Semiconductor-Group-680°C70°C148 K
MF820M-GNCAV20Mb, 8/16-bit data bus compact flash cardMitsubishi-Electric-Corporation-Semiconductor-Group-680°C70°C148 K
MF820M-GNCAVXX8/16-bit data bus flash memory versionMitsubishi-Electric-Corporation-Semiconductor-Group-480°C70°C148 K
MF820M1-GMCAVXX8/16-bit data bus flash memory versionMitsubishi-Electric-Corporation-Semiconductor-Group-480°C70°C148 K
MURF820SWITCHMODE power rectifierMotorola-3-65°C150°C81 K
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