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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF840N-channel HEXFET, 500V, 8AMotorola-3-55°C150°C146 K
IRF840500 V, Power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C60 K
IRF840N-channel HEXFET, 500V, 8ASamsung-Electronic-3-55°C150°C272 K
IRF840N-channel HEXFET, 500V, 8ASGS-Thomson-Microelectronics-3-65°C150°C334 K
IRF840B500V N-Channel MOSFETFairchild-Semiconductor----911 K
IRF840F1N-channel HEXFET, 500V, 4.5ASGS-Thomson-MicroelectronicsISOWATT2203-65°C150°C334 K
IRF840LCLHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-Rectifier-3-55°C150°C173 K
IRF840LCSHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-RectifierDDPak3-55°C150°C173 K
IRF840SHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-Rectifier-3-55°C150°C172 K
SRF840Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 8.0 A.distributor-2-65°C125°C150 K
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