Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FD1000FH-56 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 41 K |
FD1000FV-90 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 50 K |
FD1000FX-90 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 44 K |
RFD10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 133 K |
RFD10P03LSM | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 188 K |
RFD10P03LSM | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 133 K |
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