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fd10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FD1000FH-56High-frequency rectifier diode for high power, high frequency, press pack typeMitsubishi-Electric-Corporation-Semiconductor-Group-2-40°C125°C41 K
FD1000FV-90High-frequency rectifier diode for high power, high frequency, press pack typeMitsubishi-Electric-Corporation-Semiconductor-Group-2-40°C125°C50 K
FD1000FX-90High-frequency rectifier diode for high power, high frequency, press pack typeMitsubishi-Electric-Corporation-Semiconductor-Group-2-40°C125°C44 K
RFD10P03L10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFETIntersil-Corporation----133 K
RFD10P03LSM10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFETFairchild-Semiconductor----188 K
RFD10P03LSM10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFETIntersil-Corporation----133 K
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