| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FP502 | N-channel MOSFET + schottky barrier diode, DC-DC converter application | SANYO-Electric-Co--Ltd- | 2132 | 7 | - | - | 107 K |
| FP50F | 5000 V rectifier stack 2.2 A forward current, 150 ns recovery time | distributor | - | 2 | -55°C | 150°C | 70 K |
| FP50S | 5000 V rectifier stack 2.2 A forward current, 3000 ns recovery time | distributor | - | 2 | -55°C | 150°C | 70 K |
| RFP50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 47 K |
| RFP50N05L | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 376 K |
| RFP50N05L | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 51 K |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 375 K |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 74 K |
| RFP50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 74 K |
| RFP50N06LE | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 412 K |
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