Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FR21-0001 | 869-894 MHz, dual junction drop-in isolator | M-A-COM---manufacturer-of-RF | FP | 2 | -10°C | 70°C | 58 K |
FR21-0002 | 925-960 MHz, dual junction drop-in isolator | M-A-COM---manufacturer-of-RF | FP | 2 | -10°C | 70°C | 58 K |
FR21-0003 | 1805-1880 MHz, dual junction drop-in isolator | M-A-COM---manufacturer-of-RF | FP | 2 | -10°C | 70°C | 58 K |
FR21-0004 | 1930-1990 MHz, dual junction drop-in isolator | M-A-COM---manufacturer-of-RF | FP | 2 | -10°C | 70°C | 58 K |
IRFR210 | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
IRFR210 | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
IRFR214 | 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 52 K |
IRFR214 | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
IRFR214 | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
IXFR21N100Q | 1000V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 35 K |
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