| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FG6000AU-120D | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 59 K |
| MG600J1US51 | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Toshiba | - | 19 | - | - | 319 K |
| MG600Q1US41 | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Toshiba | - | 19 | - | - | 288 K |
| MG600Q1US51 | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Toshiba | - | 4 | - | - | 305 K |
| PG600A | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 50 A. Max average forward rectified current at Ta = 75degC 6.0 A. | distributor | - | 2 | -55°C | 150°C | 50 K |
| PG600B | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current at Ta = 75degC 6.0 A. | distributor | - | 2 | -55°C | 150°C | 50 K |
| ZNBG6000Q20 | FET bias controller | Zetex-Semiconductor | QSOP | 20 | -40°C | 70°C | 406 K |
| ZNBG6000Q20 | FET bias controller | Zetex-Semiconductor | QSOP | 20 | -40°C | 70°C | 406 K |
| ZNBG6001Q20 | FET bias controller | Zetex-Semiconductor | QSOP | 20 | -40°C | 70°C | 406 K |
| ZNBG6001Q20 | FET bias controller | Zetex-Semiconductor | QSOP | 20 | -40°C | 70°C | 406 K |
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