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gbc30

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRGBC30FInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C246 K
IRGBC30FD2Insulated gate bipolar transistor with ultrafast soft reconery diodeInternational-Rectifier-3-55°C150°C414 K
IRGBC30KInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C239 K
IRGBC30K-SInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C266 K
IRGBC30MInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C237 K
IRGBC30MD2Insulated gate bipolar transistor with ultrafast soft reconery diodeInternational-Rectifier-3-55°C150°C416 K
IRGBC30MD2-SInsulated gate bipolar transistor with ultrafast soft reconery diodeInternational-Rectifier-3-55°C150°C425 K
IRGBC30SInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C252 K
IRGBC30UInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C244 K
IRGBC30UD2Insulated gate bipolar transistor with ultrafast soft reconery diodeInternational-Rectifier-3-55°C150°C413 K
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