| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EH10002Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| EH10004Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| EH10006Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| EH10008Z1 | 3 Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 80 K |
| HSH1000CEO | Lamp for photolithography. Iding mode power 700 watts, current 16 amps(DC), voltage 44 volts(DC). Flash mode power 1000 watts, current 21.3 amps(DC), voltage 47 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 45 K |
| HSH1000KS | Lamp for photolithography. Power 1000 watts, current 28 amps(DC), voltage 38 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 45 K |
| OH10003 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| OH10004 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| OH10008 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 44 K |
| OH10009 | GaAs hall element | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
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