| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTH12N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTH12N50C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTH12N50E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTP10N50E1HGTH12N40C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| IXFH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 232 K |
| IXFH12N90 | 900V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 85 K |
| IXTH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 106 K |
| RFH12N35 | 12.0A, 350V and 400V, 0.380 ohm, N-Channel Power MOSFET FN1630.2 | Intersil-Corporation | - | - | - | - | 40 K |
| RFH12N40 | 12.0A, 350V and 400V, 0.380 ohm, N-Channel Power MOSFET FN1630.2 | Intersil-Corporation | - | - | - | - | 40 K |
| STH12NA60FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 243 K |
| 1 [2] [3] [4] |
|---|
