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hb10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IHB100S4803100 Watt single output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage 3.3VDC, rated max. output current 30A.distributor-8-40°C100°C241 K
IHB100S4805100 Watt single output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage 5.1VDC, rated max. output current 20A.distributor-8-40°C100°C241 K
PHB100N03LT25 V, N-channel enhancement mode field-effect transistorPhilips-SemiconductorsSOT3-55°C175°C331 K
PHB10N40PowerMOS transistor.Philips-SemiconductorsSOT4043-55°C150°C69 K
PHB10N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C90 K
VHB10-12FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
VHB10-12SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C16 K
VHB10-28FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
VHB10-28SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
VHB100-12NPN silicon RF power transistorAdvanced-Semiconductor-Inc--6-65°C200°C17 K
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