| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASI1010 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| DI101 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current (Ta=40degC) 1.0A. | distributor | DIP | 4 | -55°C | 125°C | 45 K |
| DI101 | 100 V, 1.0 A, dual-in-line glass passivated single-phase bridge rectifier | distributor | DIP | 4 | -55°C | 125°C | 154 K |
| DI1010 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 1000V. Max average forward current (Ta=40degC) 1.0A. | distributor | DIP | 4 | -55°C | 125°C | 45 K |
| IRFI1010N | HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A | International-Rectifier | - | 3 | -55°C | 175°C | 109 K |
| ispLSI1016EA-100LJ44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 162 K |
| ispLSI1016EA-100LT44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 162 K |
| ispLSI1016EA-125LJ44 | In-system programmable high density PLD, 125 MHz, 7.5ns, low power | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 162 K |
| ispLSI1016EA-200LJ44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 162 K |
| ispLSI1016EA-200LT44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 162 K |
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