| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASI1020 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| DI102 | 200 V, 1 A dual-in-line glass passivated single-phase silicon bridge rectifier | distributor | Plastic | 4 | -55°C | 125°C | 87 K |
| DI102 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current (Ta=40degC) 1.0A. | distributor | DIP | 4 | -55°C | 125°C | 45 K |
| DI102 | 200 V, 1 A, dual-in-line glass passivated single-phase bridge rectifier | distributor | DIP | 4 | -55°C | 125°C | 154 K |
| DI102 | 200 V, 1.0 A, dual-in-line glass passivated single-phase bridge rectifier | distributor | DIP | 4 | -55°C | 125°C | 154 K |
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