| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF130 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| IRF130 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRF130 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| IRF130SMD | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 22 K |
| IRF131 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| IRF1310N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | - | 3 | -55°C | 175°C | 96 K |
| IRF1310NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 156 K |
| IRF1310S | HEXFET power MOSFET | International-Rectifier | - | 3 | -55°C | 175°C | 361 K |
| IRF132 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| IRF133 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
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