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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| IRF150 | 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 57 K |
| IRF150 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 100V, RDS(on) = 0.055 Ohm, ID = 38A | International-Rectifier | - | 3 | -55°C | 150°C | 150 K |
| IRF150SMD | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 22 K |
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