| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF330 | 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 58 K |
| IRF330 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A | International-Rectifier | - | 3 | -55°C | 150°C | 146 K |
| IRF331 | 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 58 K |
| IRF3315 | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A | International-Rectifier | - | 3 | -55°C | 175°C | 124 K |
| IRF3315L | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A | International-Rectifier | - | 3 | -55°C | 175°C | 197 K |
| IRF3315S | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 197 K |
| IRF332 | 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 58 K |
| IRF333 | 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 58 K |
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