| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF510 | 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 70 K |
| IRF510 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A | International-Rectifier | - | 3 | -55°C | 175°C | 175 K |
| IRF510S | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A | International-Rectifier | - | 3 | -55°C | 175°C | 178 K |
| IRF520 | 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 69 K |
| IRF520N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A | International-Rectifier | - | 3 | -55°C | 175°C | 116 K |
| IRF520NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 185 K |
| IRF530N | 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 125 K |
| IRF540 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 53 K |
| IRF540FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 53 K |
| IRF540N | 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 126 K |
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