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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF5804HEXFET power MOSFET. VDSS = -40V, RDS(on) = 198 mOhm, ID = -2.5A @ VGS = -10V, RDS(on) = 334 mOhm, ID = -2.0A @ VGS = -4.5VInternational-RectifierTSOP6-55°C150°C99 K
IRF5805HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5VInternational-RectifierTSOP6-55°C150°C126 K
IRF5806HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5VInternational-RectifierMicro66-55°C150°C218 K
IRF5810HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5VInternational-RectifierTSOP6-55°C150°C208 K
IRF5850HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 OhmInternational-RectifierTSOP6-55°C150°C126 K
IRF5851HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch)International-RectifierTSOP6-55°C150°C172 K
IRF5852HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.090 Ohm, ID = 2.7A @ VGS = 4.5V, RDS(on) = 0.120 Ohm, ID = 2.2A @ VGS = 2.5VInternational-RectifierTSOP6-55°C150°C239 K
IRF5EA1310HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.036 Ohm, ID = 23AInternational-RectifierLCC28-55°C150°C238 K
IRF5M3205HEXFET power MOSFET thru-hole. BVDSS = 55V, RDS(on) = 0.015 Ohm, ID = 35AInternational-Rectifier-3-55°C150°C113 K
IRF5M3415HEXFET power MOSFET thru-hole. BVDSS = 150V, RDS(on) = 0.049 Ohm, ID = 35AInternational-Rectifier-3-55°C150°C113 K
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