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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF8202.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETIntersil-Corporation----54 K
IRF820HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C169 K
IRF820N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----92 K
IRF820AHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C100 K
IRF820ALHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-Rectifier-3-55°C150°C133 K
IRF820ASHEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5AInternational-RectifierDDPak3-55°C150°C133 K
IRF8304.5A, 500V, 1.500 Ohm, N-Channel Power MOSFETIntersil-Corporation----56 K
IRF830N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----92 K
IRF8408A, 500V, 0.850 Ohm, N-Channel Power MOSFETIntersil-Corporation----56 K
IRF840N-CHANNEL 500V - 0.75 OHM - 8A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----93 K
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