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irf822

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF822N-channel MOSFET, 500V, 2.2ASamsung-Electronic-3-55°C150°C322 K
IRF822N-channel enhancement mode power MOS transistor, 500V, 2.8ASGS-Thomson-Microelectronics-3-65°C150°C169 K
IRF822FIN-channel enhancement mode power MOS transistor, 500V, 1.9ASGS-Thomson-MicroelectronicsISOWATT2203-65°C150°C169 K
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