| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF9130 | -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 58 K |
| IRF9130 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IRF9130 | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 19 K |
| IRF9130SMD | 100V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 20 K |
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